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| MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 f 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 E 0.75 0.15 2.54 0.25 2.54 0.25 123 w 2.5V DRIVE VDSS ................................................................................ 100V rDS (ON) (MAX) .............................................................. 93m ID ......................................................................................... 30A Integrated Fast Recovery Diode (TYP.) ............. 95ns Viso ................................................................................ 2000V 2.6 0.2 q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100H VGS = 0V VDS = 0V Conditions Ratings 100 10 30 120 30 30 120 25 -55 ~ +150 4.5 0.2 Unit V V A A A A A W C C V g Feb.1999 AC for 1minute, Terminal to case Typical value -55 ~ +150 2000 2.0 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 100 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 66 69 0.99 31 2000 230 120 33 135 170 170 1.0 -- 95 Max. -- 0.1 0.1 1.2 93 97 1.40 -- -- -- -- -- -- -- -- 1.5 5.00 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 50V, ID = 15A, VGS = 4V, RGEN = RGS = 50 IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = -100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 7 5 3 100ms 1ms TC = 25C Single Pulse DC 10ms 40 30 tw = 10ms 20 10 100 0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25C Pulse Test VGS = 5V 4V 3V 20 TC = 25C Pulse Test VGS = 5V 2V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 40 16 4V 3V 2.5V 30 2.5V 12 PD = 25W 20 2V 8 1.5V 10 PD = 25W 1.5V 4 0 0 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 TC = 25C Pulse Test ID = 50A ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 4.0 160 VGS = 2.5V 3.0 30A 120 2.0 80 4V 1.0 10A 40 0 0 0 1.0 2.0 3.0 4.0 5.0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 50 TC = 25C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 TC = 25C VDS = 10V Pulse Test DRAIN CURRENT ID (A) 30 FORWARD TRANSFER ADMITTANCE yfs (S) 40 20 10 101 7 5 4 3 2 75C 125C 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2 Tch = 25C f = 1MHZ VGS = 0V Ciss SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 tf TCh = 25C VDD = 50V VGS = 4V RGEN = RGS = 50 td(off) 103 7 5 3 2 102 7 5 3 2 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) Coss Crss 102 7 5 4 3 2 101 0 10 tr td(on) 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 50 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5.0 Tch = 25C ID = 30A SOURCE CURRENT IS (A) 4.0 40 3.0 VDS = 20V 50V 80V 30 TC = 125C 2.0 20 75C 25C 1.0 10 0 0 10 20 30 40 50 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 D = 1.0 5 3 0.5 2 0.2 1.2 1.0 0.8 100 0.1 7 5 3 2 10-1 7 5 3 2 0.05 0.02 0.01 Single Pulse PDM tw T D= tw T 0.6 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 CHANNEL TEMPERATURE Tch (C) |
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